| Codul producătorului | SI2307CDS-T1-GE3 |
|---|---|
| Producător | Electro-Films (EFI) / Vishay |
| Descriere | MOSFET P-CH 30V 3.5A SOT23-3 |
| Condiții libere de stare / stare RoHS | Plăcuță fără plumb / Compliant cu RoHS |
| SI2307CDS-T1-GE3 Foi de date | SI2307CDS |
| SI2307CDS-T1-GE3 Preț | Cere un citat |
| Vgs (a) (Max) @ Id | 3V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Tehnologie | MOSFET (Metal Oxide) |
| Pachetul dispozitivului furnizor | SOT-23-3 (TO-236) |
| Serie | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 88 mOhm @ 3.5A, 10V |
| Distrugerea puterii (Max) | 1.1W (Ta), 1.8W (Tc) |
| ambalare | Tape & Reel (TR) |
| Pachet / Caz | TO-236-3, SC-59, SOT-23-3 |
| Alte nume | SI2307CDS-T1-GE3TR SI2307CDST1GE3 |
| Temperatura de Operare | -55°C ~ 150°C (TJ) |
| Tipul de montare | Surface Mount |
| Nivelul de sensibilitate la umiditate (MSL) | 1 (Unlimited) |
| Producător Standard Timp de plumb | 32 Weeks |
| Condiții de stare fără plumb / stare RoHS | Lead free / RoHS Compliant |
| Capacitate de intrare (Ciss) (Max) @ Vds | 340pF @ 15V |
| Încărcare prin poștă (Qg) (Max) @ Vgs | 6.2nC @ 4.5V |
| Tipul FET | P-Channel |
| FET Feature | - |
| Tensiunea de transmisie (valorile max. | 4.5V, 10V |
| Scurgeți la sursa de tensiune (Vdss) | 30V |
| descriere detaliata | P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236) |
| Curent - scurgere continuă (Id) @ 25 ° C | 3.5A (Tc) |
| Imagine | Număr parc | Producător | Descriere | |
|---|---|---|---|---|
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SI2305CDS-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 8V 5.8A SOT23-3 | Detalii |
| Electro-Films (EFI) / Vishay SI2307CDS-T1-GE3 | SI2307CDS-T1-GE3 price | SI2307CDS-T1-GE3 distributor | SI2307CDS-T1-GE3 supplier |
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| Electro-Films (EFI) / Vishay SI2307CDS-T1-GE3 | Vishay Electro-Films SI2307CDS-T1-GE3 | Phoenix Passive Components / Vishay SI2307CDS-T1-GE3 |