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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > RN1119MFV,L3F

RN1119MFV,L3F

Manufacturer Part Number RN1119MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Description X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status Lead free / RoHS Compliant
RN1119MFV,L3F Datasheets RN1119MFV
RN1119MFV,L3F Price Request a quote
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Specifications of RN1119MFV,L3F

Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Transistor TypeNPN - Pre-Biased
Supplier Device PackageVESM
Series-
Resistor - Base (R1)1 kOhms
Power - Max150mW
Package / CaseSOT-723
Other NamesRN1119MFVL3F
Mounting TypeSurface Mount
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Detailed DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Current - Collector Cutoff (Max)100nA (ICBO)
Current - Collector (Ic) (Max)100mA
We can supply Toshiba Semiconductor and Storage part# RN1119MFV,L3F, use the request quote form to request RN1119MFV,L3F pirce and lead time. OEMs Electronics - OEMsec.com is an independent stocking distributor of electronic components. With 3+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1119MFV,L3F. The price and lead time for RN1119MFV,L3F depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# RN1119MFV,L3F. We look forward to doing business with you.

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