| Hersteller-Teilenummer | RSD201N10TL |
|---|---|
| Hersteller | LAPIS Semiconductor |
| Beschreibung | MOSFET N-CH 100V 20A CPT3 |
| Bleifreier Status / RoHS Status | Bleifrei / RoHS-konform |
| RSD201N10TL Datenblätte | RSD201N10 |
| RSD201N10TL Preis | Angebot anfordern |
| VGS (th) (Max) @ Id | 2.5V @ 1mA |
|---|---|
| Vgs (Max) | ±20V |
| Technologie | MOSFET (Metal Oxide) |
| Supplier Device-Gehäuse | CPT3 |
| Serie | - |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 20A, 10V |
| Verlustleistung (max) | 850mW (Ta), 20W (Tc) |
| Verpackung | Tape & Reel (TR) |
| Verpackung / Gehäuse | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andere Namen | RSD201N10TLTR |
| Betriebstemperatur | 150°C (TJ) |
| Befestigungsart | Surface Mount |
| Feuchtigkeitsempfindlichkeitsniveau (MSL) | 1 (Unlimited) |
| Bleifreier Status / RoHS-Status | Lead free / RoHS Compliant |
| Eingabekapazität (Ciss) (Max) @ Vds | 2100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Typ FET | N-Channel |
| FET-Merkmal | - |
| Antriebsspannung (Max Rds On, Min Rds On) | 4V, 10V |
| Drain-Source-Spannung (Vdss) | 100V |
| detaillierte Beschreibung | N-Channel 100V 20A (Tc) 850mW (Ta), 20W (Tc) Surface Mount CPT3 |
| Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 20A (Tc) |
| Bild | Artikelnummer | Hersteller | Beschreibung | |
|---|---|---|---|---|
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