| Manufacturer Part Number | SI1073X-T1-GE3 |
|---|---|
| Manufacturer | Electro-Films (EFI) / Vishay |
| Description | MOSFET P-CH 30V 0.98A SC89-6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| SI1073X-T1-GE3 Datasheets | SI1073X |
| SI1073X-T1-GE3 Price | Request a quote |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
|---|---|
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SC-89-6 |
| Series | TrenchFET® |
| Rds On (Max) @ Id, Vgs | 173 mOhm @ 980mA, 10V |
| Power Dissipation (Max) | 236mW (Ta) |
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Other Names | SI1073X-T1-GE3TR SI1073XT1GE3 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 9.45nC @ 10V |
| FET Type | P-Channel |
| FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Detailed Description | P-Channel 30V 236mW (Ta) Surface Mount SC-89-6 |
| Current - Continuous Drain (Id) @ 25°C | - |
| Image | Part Number | Manufacturer | Description | |
|---|---|---|---|---|
 |
SI1082-A-GM | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
 |
SI1071X-T1-E3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 30V 0.96A SOT563F | Details |
|
SI1078X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 30V 1.02A SOT563F | Details |
|
SI1077X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 20V SC89-6 | Details |
|
SI1080-A-GM | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
|
SI1081-A-GM | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
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SI1070X-T1-E3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 30V 1.2A SOT563F | Details |
|
SI1072X-T1-E3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 30V 1.3A SOT563F | Details |
|
SI1069X-T1-E3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 20V 0.94A SC89-6 | Details |
 |
SI1079X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 30V 1.44A SC89-6 | Details |
|
SI1070X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 30V 1.2A SOT563F | Details |
|
SI1083-A-GM | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
|
SI1072X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET N-CH 30V SC89 | Details |
|
SI1082-A-GMR | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
|
SI1069X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 20V 0.94A SC89-6 | Details |
|
SI1080-A-GMR | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
|
SI1071X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 30V 0.96A SC89-6 | Details |
|
SI1073X-T1-E3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 30V 0.98A SC89-6 | Details |
|
SI1081-A-GMR | Energy Micro (Silicon Labs) | IC RF TXRX+MCU ISM<1GHZ 36-WFQFN | Details |
|
SI1067X-T1-GE3 | Electro-Films (EFI) / Vishay | MOSFET P-CH 20V 1.06A SC89-6 | Details |
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